inchange semiconductor product specification silicon npn power transistors BUL128D description with to-220c package high voltage ,high speed integrated antiparallel collector-emitter diode applications designed for use in lighting applications and low cost switch-mode power supplies. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 700 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 9 v i c collector current 4 a i cm collector current-peak (t p <5 ms) 8 a i b base current 2 a i bm base current-peak (t p <5 ms) 4 a p t total power dissipation t c =25 70 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.78 /w
inchange semiconductor product specification 2 silicon npn power transistors BUL128D characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; l=25mh 400 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 9 v cesat-1 collector-emitter saturation voltage i c =0.5a ;i b =0.1a 0.7 v v cesat-2 collector-emitter saturation voltage i c =1a ;i b =0.2a 1.0 v v cesat-3 collector-emitter saturation voltage i c =2.5a ;i b =0.5a 1.5 v v cesat-4 collector-emitter saturation voltage i c =4a ;i b =1a 0.5 v v besat-1 base-emitter saturation voltage i c =0.5a ;i b =0.1a 1.1 v v besat-2 base-emitter saturation voltage i c =1a ;i b =0.2a 1.2 v v besat-3 base-emitter saturation voltage i c =2.5a ;i b =0.5a 1.3 v i ces collector cut-off current v ce =700v; v be =-1.5v t j =125 100 500 a i ceo collector cut-off current v ce =400v; i b =0 250 a h fe-1 dc current gain i c =2a ; v ce =5v 8 40 h fe-2 dc current gain i c =10ma ; v ce =5v 10 v f diode forward voltage i c =2a 2.5 v switching times resistive load t s storage time 2.9 s t f fall time v cc =250v ,i c =2a i b1 =-i b2 =0.4a;t p =30 s 0.2 s
inchange semiconductor product specification 3 silicon npn power transistors BUL128D package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)
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